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參數(shù)資料
| 型號： | SD106WS-GS18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, MICRO MINIATURE, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 275K |
| 代理商： | SD106WS-GS18 |
www.vishay.com
2
Document Number 85685
Rev. 1.3, 12-Dec-05
SD106WS
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25
°C unless otherwise specified)
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse breakdown voltage
IR = 100 A
VR
30
V
Leakage current
VR = 30 V
IR
5.0
A
Forward voltage
IF = 2.0 mA
VF
260
mW
IF = 15 mA
VF
320
mW
IF = 100 mA
VF
420
mW
IF = 200 mA
VF
490
550
mW
Diode capacitance
VR = 10 V, f = 1.0 MHz
Ctot
15
pF
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Typical Variation of Reverse Current at Various
Temperatures
18501
1000
100
10
1
0.1
0.01
I
-
Forw
a
rd
C
u
rrent
(mA)
F
00.2 0.3
0.4
0.5
0.6 0.7 0.8
0.1
= 125 °C
Tamb
40 °C
25 °C
VF - Forward Voltage (V)
18502
= 125 °C
Tamb
100 °C
75 °C
50 °C
25 °C
I-
R
e
v
e
rs
eC
u
rrent
(
A)
R
1000
100
10
1
0.1
0.01
10
15
05
25
30
20
VR - Reverse Voltage (V)
Figure 3. Typical Capacitance °C vs. Reverse Applied Voltage VR
18503
45
40
35
30
25
20
15
10
5
0
04
8
12
16
20
24
28
C
-
Typic
a
lC
a
p
a
cit
a
nce
(pF)
T
VR - Reverse Voltage (V)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SD106WSL-CA2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCHOTTKY DIODES |
| SD106WSL-CB2-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCHOTTKY DIODES |
| SD107 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:SCHOTTKY DIODES |
| SD1070 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND |
| SD-10702 | 制造商:LG Corporation 功能描述:PREMIUM COMMERCIAL PACKAGE |
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