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參數(shù)資料
| 型號： | SD103BWS-V-G-18 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.35 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | GREEN PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 66K |
| 代理商： | SD103BWS-V-G-18 |
www.vishay.com
2
Document Number 81142
Rev. 1.1, 13-May-11
SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C unless otherwise specified
Parameter
Test condition
Part
Symbol
Min.
Typ.
Max.
Unit
Leakage current
VR = 30 V
SD103AWS-V-G
IR
5A
VR = 20 V
SD103BWS-V-G
IR
5A
VR = 10 V
SD103CWS-V-G
IR
5A
Forward voltage drop
IF = 20 mA
VF
370
mV
IF = 200 mA
VF
600
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
pF
Reverse recovery time
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
trr
10
ns
Figure 1. Typical Variation of Forward Current vs. Forward
Voltage
Figure 2. Typical High Current Forward Conduction Curve
18488
0.01
1000
100
0.1
1
10
0
0.4
0.6
0.8
1.0
0.2
I
-
F
or
w
ard
C
u
rrent
(mA)
F
VF - Forward Voltage (V)
18489
4
5
3
2
0
1
0.5
1.0
01.5
I
-
F
o
rw
ard
C
u
rrent
(A)
F
VF - Forward Voltage (V)
duty cycle = 2 %
tp = 300 ms
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
Figure 4. Diode Capacitance vs. Reverse Voltage
0.01
0.1
1
10
100
1000
0
5
10 15 20 25 30 35 40 45 50
V - Reverse Voltage (V)
I R
-
Re
v
erse
C
u
rrent
(
A)
R
20084
75 °C
50 °C
25 °C
100 °C
Tamb = 125 °C
18491
10
20
30
40
050
C-
Diode
Capacitance
(pF)
D
VR - Reverse Voltage (V)
100
10
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SD103CWS-V-G-18 | 0.35 A, 20 V, SILICON, SIGNAL DIODE |
| SD103BW | 0.35 A, 30 V, SILICON, SIGNAL DIODE |
| SD103CW | 0.35 A, 40 V, SILICON, SIGNAL DIODE |
| SD103B | 30 V, SILICON, SIGNAL DIODE, DO-35 |
| SD103A-D8 | SILICON, SIGNAL DIODE, DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD103BWS-V-GS08 | 功能描述:肖特基二極管與整流器 30mA 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SD103BWS-V-GS18 | 功能描述:肖特基二極管與整流器 5uA 30 Volt 15A IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SD103BW-T | 功能描述:肖特基二極管與整流器 350mA 30V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SD103BW-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| SD103BW-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
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