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參數(shù)資料
| 型號(hào)： | SD103A |
| 廠商： | GE Security, Inc. |
| 英文描述： | Schottky Diodes(肖特基二極管) |
| 中文描述： | 肖特基二極管（肖特基二極管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 132K |
| 代理商： | SD103A |
FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
DO-35
m
m
m
max.
Cathode
Mark
.020 (0.52)
max.
.079 (2.0)
Dimensions in inches and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
4/98
SD103A THRU SD103C
Symbol
Value
Unit
Peak Inverse Voltage
SD103A
SD103B
SD103C
V
RRM
V
RRM
V
RRM
40
30
20
V
V
V
Power Dissipation (Infinite Heat Sink)
P
tot
400
1)
mW
Single Cycle Surge
60 Hz Sine Wave
I
FSM
15
A
Junction Temperature
T
j
125
1)
°C
Storage Temperature Range
T
S
–55 to +150
1)
°C
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
For general purpose applications.
The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring. The low forward
voltage drop and fast switching make it ideal for
protection of MOS devices, steering, biasing, and
coupling diodes for fast switching and low logic level
applications. Other applications are click suppression,
efficient full wave bridges in
telephone subsets, and blocking diodes in
rechargeable low voltage battery systems.
This diode is also available in MiniMELF case with the
type designation LL103A … LL103C and SOD-123 case
with the type designations SD103AW .. SD103CW.
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