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參數(shù)資料
| 型號： | SD103A |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCHOTTKY BARRIER DIODE |
| 中文描述： | 0.35 A, 40 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 66K |
| 代理商： | SD103A |
DS11009 Rev. 11 - 2
1 of 3
SD103A - SD103C
SD103A - SD103C
SCHOTTKY BARRIER DIODE
Features
Low Forward Voltage Drop
Guard Ring Construction for Transient
Protection
Low Reverse Recovery Time
Low Reverse Capacitance
Case: DO-35, Glass
Leads: Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Polarity: Cathode Band
Weight: 0.13 grams (approx.)
Mechanical Data
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
SD103A
SD103B
SD103C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40
30
20
V
RMS Reverse Voltage
V
R(RMS)
28
21
14
V
Forward Continuous Current
I
FM
350
mA
Repetitive Peak Forward Current
@ t
1.0s
I
FRM
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3 ms Half Sine Wave
I
FSM
15
A
Power Dissipation
P
d
400
mW
Thermal Resistance, Junction to Ambient Air
R
JA
300
K/W
Operating Junction Temeperature
T
j
125
°C
Storage Temperature Range
T
STG
-55 to +150
C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage
SD103A
SD103B
SD103C
V
(BR)R
40
30
20
V
I
RS
= 100 A (pulsed)
Maximum Forward Voltage Drop
V
FM
0.37
0.60
V
I
F
= 20mA
I
F
= 200mA
Maximum Peak Reverse Current
SD103A
SD103B
SD103C
I
RM
5.0
A
V
R
= 30V
V
R
= 20V
V
R
= 10V
V
R
= 0V, f = 1.0MHz
Junction Capacitance
C
j
50
pF
Reverse Recovery Time
t
rr
10
ns
I
F
= I
R
= 50mA to 200mA,
I
rr
= 0.1 x I
R
, R
L
= 100
A
A
B
C
D
DO-35
Dim
Min
Max
A
25.40
B
4.00
C
0.60
D
2.00
All Dimensions in mm
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