參數(shù)資料
型號: SD101CW-GS18
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.03 A, 40 V, SILICON, SIGNAL DIODE
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù): 2/6頁
文件大小: 95K
代理商: SD101CW-GS18
www.vishay.com
2
Document Number 85679
Rev. 1.4, 16-Dec-05
SD101AW / 101BW / 101CW
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
RthJA
3001)
K/W
Junction temperature
Tj
1251)
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Reverse breakdown voltage
IR = 10 μA
SD101AW
V(BR)R
60
V
SD101BW
V(BR)R
50
V
SD101CW
V(BR)R
40
V
Leakage current
VR = 50 V
SD101AW
IR
200
nA
VR = 40 V
SD101BW
IR
200
nA
VR = 30 V
SD101CW
IR
200
nA
Forward voltage drop
IF = 1 mA
SD101AW
VF
0.41
V
SD101BW
VF
0.40
V
SD101CW
VF
0.39
V
IF = 15 mA
SD101AW
VF
1.0
V
SD101BW
VF
0.95
V
SD101CW
VF
0.90
V
Diode capacitance
VR = 0 V, f = 1 MHz
SD101AW
Ctot
2.0
pF
SD101BW
Ctot
2.1
pF
SD101CW
Ctot
2.2
pF
Reverse recovery time
IF = IR = 5 mA,
recover to 0.1 IR
trr
1
相關(guān)PDF資料
PDF描述
SD101BW 50 V, SILICON, SIGNAL DIODE
SD101CW 40 V, SILICON, SIGNAL DIODE
SD101B 0.1 A, SILICON, SIGNAL DIODE, DO-35
SD101A 0.1 A, SILICON, SIGNAL DIODE, DO-35
SD101B 0.015 A, 50 V, SILICON, SIGNAL DIODE, DO-35
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