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參數(shù)資料
| 型號： | SCR5040 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 晶閘管 |
| 英文描述： | 80 A, 400 V, SCR, TO-65 |
| 封裝： | TO-65, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 273K |
| 代理商： | SCR5040 |
Medium Power
Thyristors
50A 400 Volt
Features
Blocking Voltage to 400 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Low Thermal Resist
a
nce
Maximum Ratings
(T
J
=25
Symbol
V
RRM
V
DRM
(T
J
= Tjmax,I
DRM
=15mA)
unless otherwise
℃
specified)
Parameter
Rating
Unit
Peak Repetitive Off-State Voltage
400
V
I
TSM
Peak Non-repetitive Surge Current
(One cycle, 60 Hz, )
440
A
I
T(RMS)
On-State RMS Current
Max average on-state current @Tc=90
℃
180
sine conduction
80
A
I
T(AV)
50
A
I
GT
DC gate current required to trigger
100
mA
I
GM
Max peak positive gate current , Tj=Tjmax
Peak Gate Power Dissipation
(Tj=Tjmax)
Average Gate Power Dissipation
2.5
A
P
GM
10
W
P
G(AV)
2.5
W
di/dt
Max. rate of rise of turned-on current ,
Tj=Tjmax, V
DM
=rated V
DRM
100
A/us
V
TM
Maximum On-state Voltage(I
PK
=157A)
2.10
V
I
HO
Max holding current , Tj=25
℃
, Anode
supply 22V, resistive load
200
mA
Critical
dv/dt
Critical rate of rise of off-state voltage ,
T
J
=Tjmax, linear to 100% rated V
DRM
800
V/usec.
V
GT
DC gate trigger current for anode voltage
at Tj=25
℃
Typical delay time, Tc=25
℃
,VDM=rated
VDRM, ITM=10Adc resistive circuit , gate
pulse=10V, 150 ohm souce, Tp=20us
2.5
V
T
d
0.9
us
T
J
*Operating Junction Temperature Range
-40 to +125
℃
T
STG
*Storage Temperature Range
-40 to +125
℃
R
thjc
Thermal Resistance , Junction to case
0.35
℃
/W
All dimensions in millimeters (inches)
SCR5040
omp
onents
20736 Marilla
Street Chatsworth
!"#
$% !"#
M C C
TM
Micro Commercial Components
www.
mc c semi
.c om
Revision: 1 2006/02/28
TO-65
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