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參數(shù)資料
| 型號： | SCP-5888 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HV BRIDGE RECTIFIER STACK: 1A 15000V MODULE |
| 中文描述： | 1 A, SILICON, BRIDGE RECTIFIER DIODE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 107K |
| 代理商： | SCP-5888 |
SENSITRON
Part Number: SCP-5888, Rev. –
HV BRIDGE RECTIFIER STACK: 1A 15000V MODULE
Features
Ideal for HV Power Supply Application
Excellent Thermal Performance Design
Isolated base plate: 15KV dc
Low Mechanical Stress Design
Contact Factory for Screening options
MAXIMUM RATINGS
PARAMETER
221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SCP-5888
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
Peak Inverse Voltage and DC Blocking Voltage Per Diode
BV
CES
3300
-
-
V
Average Rectified Forward Current Per Diode T
C
= 25
O
C
T
C
= 100
O
C
I
O
-
-
1
0.2
A
A
Peak Surge Current Per Diode
I
FSM
-
-
25
A
Operating Temperature Range
T
OP
- 65
-
150
O
C
ELECTRICAL CHARACTERISTICS
PARAMETER
(Tj=25
0
C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage I
F
=1A, t
P
= 300 μs Pulse
Reverse Leakage Current T
C
= 25
O
C
V
R
= 2500V
V
F1
-
-
7.5
V
I
R1
-
-
1.0
μA
Reverse Leakage Current T
C
= 100
O
C
V
R
= 2500V
I
R2
-
-
50
μA
Breakdown Voltage I
R
= 100
μ
A
B
VR
3300
-
-
V
Reverse Recovery Time I
F
= 0.5A, I
R
= 1.0A , I
RR
= 0.25A
t
RR
-
-
60
ns
Capacitance per Diode V
R
= 6V
PACKAGE CHARACTERISTICS
Thermal Resistance (Junction to Base)
C
T
-
-
60
pF
R
θ
JB
-
-
2.5
O
C/W
Insulation Resistance: All Terminals to Base @ 15000V
R
INSUL
10
-
-
G
Storage Temperature Range
T
STG
- 65
-
150
O
C
Isolation to Base Plate
V
iso
-
-
15000
V
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