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參數(shù)資料
| 型號： | SCG015B-G |
| 英文描述： | Watt, High Linearity InGaP HBT Amplifier |
| 中文描述： | 瓦，高線性InGaP HBT功率放大器 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 211K |
| 代理商： | SCG015B-G |
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Specifications and information are subject to change without notice
Page 4 of 5 October 2006
SCG015
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
2450 MHz Reference Design
Typical RF Performance at 25
°
C
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+9 dBm / tone, 1 MHz spacing)
Noise Figure
Device Voltage
Quiescent Current
Please see note 2 on page 1.
RES
ID=R3
R=220 Ohm
CAP
ID=C4
C=56 pF
CAP
ID=C5
CAP
ID=C1
C=56 pF
IND
ID=L2
L=15 nH
RES
ID=R1
R=30 Ohm
IND
ID=L1
L=15 nH
CAP
C=1000 pF
CAP
ID=C3
CAP
ID=C6
C=56 pF
RES
DIODE1
ID=D1
C=1 pF
RES
ID=L3
RES
ID=R2
R=390 Ohm
SUBCKT
NET="SCG015"
PORT
P=2
PORT
P=1
Z=50 Ohm
+8 V
a system using a DC regulator.
boards. It is not specifically required in the final circuit layout in
The diode D1 is used as over-voltage protection on the evaluation
8.2 v
C8 is placed half way between silkscreen marker ‘3’ and ‘4’ or center of component placed at 23 deg. @ 2.45 GHz away from pin 3.
Ssg, OIP3 and P1dB vs.
Temperature at 2.45GHz
26
44
14
16
18
20
22
24
-40
-15
10
35
60
85
Temperature (°C)
S
38
39
40
41
42
43
O
Ssg
P1dB
OIP3
2450 MHz
14.5 dB
-12 dB
-9 dB
+23 dBm
+40 dBm
5 dB
+5 V
100 mA
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