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參數(shù)資料
| 型號： | SCF25C60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Silicon Controller Rectifiers |
| 中文描述： | 硅控制整流器 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 718K |
| 代理商： | SCF25C60 |
Silicon Controlled Rectifiers
◆
Isolation Voltage ( V
ISO
= 1500V AC )
Absolute Maximum Ratings
( T
J
= 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(AV)
Average On-State Current
Half Sine Wave : T
C
= 69 °C
16
A
I
T(RMS)
R.M.S On-State Current
180° Conduction Angle
25
A
I
TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
275
A
I
2
t
I
2
t
for Fusing
t = 8.3ms
380
A
2
s
di/dt
Critical rate of rise of on-state current
50
A/
P
GM
Forward Peak Gate Power Dissipation
20
W
P
G(AV)
Forward Average Gate Power Dissipation
Over any 20ms period
1
W
I
FGM
Forward Peak Gate Current
5
A
V
RGM
Reverse Peak Gate Voltage
5.0
V
V
ISO
Isolation Breakdown Voltage(R.M.S.)
A.C. 1 minute
1500
V
T
J
Operating Junction Temperature
- 40 ~ 125
°C
T
STG
Storage Temperature
- 40 ~ 150
°C
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor con-
trol circuit in power tool, inrush current limit circuit and heating
control system.
S CF25C60
Aug, 2003. Rev. 1
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 25 A )
◆
Low On-State Voltage (1.3V(Typ.)@ I
TM
)
3. Gate
○
1. Cathode
Symbol
○
▼
1/5
S emiWell
Semiconductor
TO-220F
○
2. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
123
Information offers: http://www.kkg.com.cn
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