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參數(shù)資料
| 型號(hào)： | SCA1N6643 |
| 廠商： | SEMICOA CORP |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.3 A, 50 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 613K |
| 代理商： | SCA1N6643 |
PRELIMINA
RY
FEATURES
Superior construction with tungsten slugs
Category-I metallurgical bonds
Hermetical sealed glass package
Low forward voltage drop
SCA1N6638
*
SCA1N6642
*
SCA1N6643
SWITCHING DIODES
Radiation Hardness Assured
PACKAGING
DESCRIPTION
This “high reliability high-speed switching” diode is suitable for numerous military applications.
This die meets the most stringent Hybrid applications.
DIODES
APPLICATIONS
Space, military and other high-reliability
applications
Ultra fast switching power supplies requiring low
forward voltage drop
Axial lead
SMT (US)
Highly stable reverse breakdown characteristics
Fast switching with no snap-off
High forward surge capability
Also provided in various surface mount type
packages and bare die
Radiation hard version is available
SMT (Other)
Bare die for HYBRID
manufacturers
MAX RATINGS
TYPES
Reverse
Breakdown
voltage
Working
peak
reverse
voltage
Average
forward
current
Forward
current
surge
peak
Thermal
resistance:
junction to
lead
Thermal
resistance:
junction to
end-cap
Thermal
resistance:
junction to
ambient
Thermal
reistance:
junction to
solder pads
Juntion and
Storage
Temperature
VBR
VRWM
IO (PCB) IFSM
RθJL
RθJEC
RθJA(PCB)
RθJSP
TJ and TSTG
TA=+75°
C
(1).
tp =
8.3ms
at L=0.375 in.
(1).
US Pkg only
UB pkg only
(2).
V
mA
A(pk)
°C/W
°C
SCA1N6638
150.0
125.0
300.0
2.5
150.0
40.0
250.0
100.0
-65 to +175
SCA1N6642
100.0
75.0
SCA1N6643
75.0
50.0
1) Derate at 4.61mA/°C (except UB) for TA above +45°C and 3.33mA/°C (UB) for TA
above +35°C.
2) TJ and TSTG is -65°C to + 200°C f
UB packages.
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