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參數(shù)資料
| 型號： | SCA1N5802 |
| 廠商： | SEMICOA CORP |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 50 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 611K |
| 代理商： | SCA1N5802 |
PRELIMINA
RY
FEATURES
Superior construction with tungsten slugs
Category-I metallurgical bonds
Hermetical sealed glass package
Low forward voltage drop
SCA1N5802
*
SCA1N5804
*
SCA1N5806
RECTIFIERS
High Power / Ultra Fast Recovery /
Radiation Hardness Assured
PACKAGING
DESCRIPTION
This “high reliability ultra fast recovery” rectifier diode family is superior in leakage current and suitable for numerous
applications in space and military area. Constructed in glass packages using an internal category-I metallurgical bond
tested per MIL-PRF-19500, these rectifiers offer the working peak reverse voltage from 50 to 150V with 2.5A maxi-
mum current rating and ultra fast switching characteristics. These devices are also available in SMT packages and bare
dies to meet the most stringent applications.
DIODES
APPLICATIONS
Space, military and other high-reliability applications
Ultra fast switching power supplies requiring low
forward voltage drop.
Axial lead
SMT (US)
Highly stable reverse breakdown
characteristics
Fast switching with no snap-off
High forward surge capability
Also provided in various surface mount
type packages and bare die
Radiation hard version is available
SMT (Other)
Bare die for HYBRID
manufacturers
ELECTRICAL CHARACTERISTICS Operating Conditions
min
typ
max
unit
symbol
Reverse current
Rated VRWM, TA=+25°C
-
TBD
1
uA
IR1
Rated VRWM, TA=+125°C
-
TBD
175
uA
IR2
Forward voltage drop
IF=1A, TA=+25°C
-
TBD
0.875
V
VF3
IF=2.5A, TA=+25°C
-
TBD
0.975
V
VF4
IF=1A, TA=+125°C
-
TBD
0.800
V
VF7
IF=1A, TA=-65°C
-
TBD
1.075
V
VF9
Breakdown voltage
SCA1N5802
IBR=100uA, TA=+25°C
60
TBD
-
V
VBR1
SCA1N5804
IBR=100uA, TA=+25°C
110
TBD
-
V
SCA1N5806
IBR=100uA, TA=+25°C
160
TBD
-
V
SCA1N5802
IBR=100uA, TA=-65°C
50
TBD
-
V
VBR2
SCA1N5804
IBR=100uA, TA=-65°C
100
TBD
-
V
SCA1N5806
IBR=100uA, TA=-65°C
150
TBD
-
Junction capacitance
VBR=10V, f=1MHz
-
TBD
25
pF
Cj
SWITCHING CHARACTERISTICS
Reverse recovery time
IF=IRM=0.5A, IREC=0.5A
TBD
25
nsec
Trr
Forward recovery voltage
Tr=8ns, IF=250mA
TBD
2.2
V
V(peak)
Forward recovery time
Tr=8ns, IF=250mA
TBD
15
nsec
Tfr
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