參數(shù)資料
型號： SC26C198
廠商： NXP Semiconductors N.V.
英文描述： Octal UART with TTL compatibility at 3.3V and 5V supply voltages
中文描述： 八路與TTL兼容的UART在3.3V和5V電源電壓
文件頁數(shù)： 4/49頁
文件大?。?/td> 358K
代理商： SC26C198
Philips Semiconductors
Product specification
SC26C198 SC68C198
SC26L198 SC68L198
Octal UART with TTL compatibility at 3.3V
and 5V supply voltages
1995 May 1
339
Pin Description
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Host system clock. Used to time operations in the Host Interface and clock internal logic. Must be greater
than twice the frequency of highest X1, Counter/Timer, TxC (1x) or RxC (1x) input frequency.
Chip select: Active low. When asserted, allows I/O access to OCTART registers by host CPU. W_RN signal
Used to convey parallel data for serial I/O between the host CPU and the 26C198
Data Acknowledge: Active low. When asserted, it signals that the last transfer of the D lines is complete.
interrupt(s). Open drain.
Interrupt Acknowledge: Active low. When asserted, indicates that the host CPU has initiated an interrupt
Input/Output 0: Multi–use input or output pin for the UART.
Input/Output 1: Multi–use input or output pin for the UART.
Global general purpose outputs, available from any channel.
Master reset: Active Low. Must be asserted at power up and may be asserted at other times to reset and
alternatively be driven by an external clock in this frequency range. Standard frequency = 3.6864 MHz
Crystal 2: If a crystal is used, this is the connection to the second terminal. If a clock signal drives X1, this pin
NOTE: Many output pins will have very fast edges, especially when lightly loaded (less than 20 pf.) These edges may move as fast as 1 to 3 ns
previous note on Sclk noise under pin assignments.
CEN
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DACKN
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O
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IACKN
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I/O0(a–d)
I/O1(a–d)
G
0
RESETN
I
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I/O
I/O
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I
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X2
O
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T
A
T
STG
CC
PD3
NOTES:
the functional operation of the device at these or any other conditions above those indicated in the Operation Section of this specification is
not implied.
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Operating ambient temperature range
Storage temperature range
DD
Power Dissipation at V
= 3.3 Volts
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See Note 3
-65 to +150
0.5
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°
C
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W
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