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參數(shù)資料
| 型號(hào)： | SC1205 |
| 廠商： | Semtech Corporation |
| 英文描述： | HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER |
| 中文描述： | 高速同步功率MOSFET驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 128K |
| 代理商： | SC1205 |
SC1205
HIGH SPEED SYNCHRONOUS POWER
MOSFET DRIVER
1999 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
PRELIMINARY - December 7, 1999
5
NOTE:
(1) All logic level inputs and outputs are open collector TTL compatible.
PIN DESCRIPTION
Pin #
Pin Name
Pin Function
1
DRN
This pin connects to the junction of the switching and synchronous
MOSFET’s. This pin can be subjected to a -2V minimum relative to
PGND without affecting operation.
2
TG
Output gate drive for the switching (high-side) MOSFET.
3
BST
Bootstrap pin. A capacitor is connected between BST and DRN pins to
develop the floating bootstrap voltage for the high-side MOSFET. The
capacitor value is typically between 0.1μF and 1μF (ceramic).
4
CO
TTL-level input signal to the MOSFET drivers.
5
EN
When high, this pin enables the internal circuitry of the device. When
low, TG, BG and PRDY are forced low and the supply current (5V) is
less than 10μA.
6
VS
+5V supply. A .22-1μF ceramic capacitor should be connected from 5V
to PGND very close to this pin.
7
BG
Output drive for the synchronous MOSFET.
8
PGND
Ground.
TIMING DIAGRAM
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