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參數(shù)資料
| 型號(hào)： | SBYV28-100-E3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 65K |
| 代理商： | SBYV28-100-E3/54 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88737
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Oct-09
SBYV28-50 thru SBYV28-200
Vishay General Semiconductor
Note
(1) Pulse test: tp = 300 μs pulse, duty cycle
≤ 2 %
Note
(1) Lead length = 3/8" on P.C.B. with 1.5" x 1.5" (38.1 mm x 38.1 mm) copper surface
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curves
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SBYV28-50
SBYV28-100
SBYV28-150
SBYV28-200
UNIT
Maximum
instantaneous
forward voltage
3.5 A
TJ = 25 °C
VF (1)
1.1
V
TJ = 150 °C
0.89
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 100 °C
300
Maximum reverse
recovery time
IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
TJ = 25 °C
trr
20
ns
Typical junction
capacitance
4.0 V, 1 MHz
CJ
20
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBYV28-50
SBYV28-100
SBYV28-150
SBYV28-200
UNIT
Typical thermal resistance
RθJA
(1)
25
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SBYV28-200-E3/54
1.138
54
1400
13" diameter paper tape and reel
SBYV28-200-E3/73
1.138
73
1000
Ammo pack packaging
0
25
50
75
100
125
150
175
0
1.0
2.0
3.0
4.0
5.0
6.0
Temperature (°C)
A
v
erage
Forwar
d
Rectified
Curr
ent
(A)
T
A, Ambient Temperature
P.C.B. Mounted
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
T
L Lead Temperature
1
10
100
20
30
40
50
60
70
80
90
Number of Cycles at 50 Hz
Peak
Forwar
d
S
ur
ge
Curr
ent
(A)
T
J = 175 °C
10 ms Single Half Sine-Wave
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SBYV28-150-E3 | 3.5 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SBYV28-200-E3 | 3.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SBYV28-50-E3 | 3.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SBYV28-100-E3 | 3.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SC015-2-TE12RA | 1 A, 200 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SBYV28-150 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Soft Recovery Ultrafast Plastic Rectifier |
| SBYV28-150-E3 | 制造商:Vishay Intertechnologies 功能描述:SBYV28-150-E3 |
| SBYV28-150-E3/51 | 功能描述:整流器 150 Volt 3.5A 20ns 90 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV28-150-E3/54 | 功能描述:整流器 150 Volt 3.5A 20ns 90 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV28-150-E3/73 | 功能描述:整流器 150 Volt 3.5A 20ns 90 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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