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參數(shù)資料
| 型號： | SBYV27-100-E3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SBYV27-100-E3/54 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88736
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Oct-09
SBYV27-50 thru SBYV27-200
Vishay General Semiconductor
Note
(1) Pulse test: 300 μs pulse width, duty cycle
≤ 2 %
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curves
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SBYV27-50
SBYV27-100
SBYV27-150
SBYV27-200
UNIT
Maximum
instantaneous
forward voltage
3.0 A
TJ = 25 °C
VF (1)
1.07
V
TJ = 150 °C
0.88
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 100 °C
200
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
15
ns
Typical junction
capacitance
4.0 V, 1 MHz
CJ
15
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBYV27-50
SBYV27-100
SBYV27-150
SBYV27-200
UNIT
Typical thermal resistance
RθJA
(1)
45
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SBYV27-200-E3/54
0.404
54
4000
13" diameter paper tape and reel
SBYV27-200-E3/73
0.404
73
2000
Ammo pack packaging
Temperature (°C)
Average
Forward
Rectified
Current
(A)
0
25
50
75
100
125
150
175
0
0.5
1.0
1.5
2.0
2.5
3.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
T
L Lead Temperature
T
A, Ambient Temperature
P.C.B. Mounted
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads
Peak
Forward
S
urge
Current
(A)
1
10
100
0
10
20
30
40
50
60
Number of Cycles at 50 Hz
T
J = 150 °C
10 ms Single Half Sine-Wave
相關PDF資料 |
PDF描述 |
|---|---|
| SBYV27-200-E3/73 | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-50-E3/54 | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-150-E3/73 | 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-100-E3/73 | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-200-E3/54 | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SBYV27-150 | 制造商:Vishay Intertechnologies 功能描述:SBYV27-150-E3 |
| SBYV27-150-E3/1 | 功能描述:整流器 150 Volt 2.0A 15ns 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV27-150-E3/23 | 功能描述:整流器 150 Volt 2.0A 15ns 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV27-150-E3/4 | 功能描述:整流器 150 Volt 2.0A 15ns 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBYV27-150-E3/51 | 功能描述:整流器 150 Volt 2.0A 15ns 50 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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