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參數(shù)資料
| 型號： | SBYV26C-HE3/54 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 75K |
| 代理商： | SBYV26C-HE3/54 |
Document Number: 88735
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBYV26C
Vishay General Semiconductor
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Junction Capacitance
Fig. 7 - Typical Transient Thermal Impedance
1
10
100
1
100
10
Peak
Forward
S
urge
Current
(A)
Number of Cycles at 50 Hz
T
J = TJ Max.
10 ms Single Half Sine-Wave
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
0.01
0.1
10
100
1
In
s
tantaneou
s
Forward
Current
(A)
T
J = 125 °C
T
J = 25 °C
T
J = 165 °C
Pulse Width = 300 μs
1 % Duty Cycle
020
60
40
100
80
0.01
0.001
0.1
10
1
100
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e
Leakage
Curr
ent
(μA)
T
J = 125 °C
T
J = 25 °C
T
J = 165 °C
Reverse Voltage (V)
Junction
Capacitance
(pF)
0.1
1
10
100
10
1
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Tran
s
ient
Thermal
Impedance
(°C/W)
0.01
0.1
1
10
100
10
1
t - Pulse Duration (s)
相關PDF資料 |
PDF描述 |
|---|---|
| SBYV26C-E3/54 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| SBYV27-100-E3/54 | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-200-E3/73 | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-50-E3/54 | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-150-E3/73 | 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-204AC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SBYV26CHE3-54 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier |
| SBYV26CHE3-73 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier |
| SBYV26D | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE： 200 to 1400V CURRENT: 1.0A |
| SBYV26E | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE： 200 to 1400V CURRENT: 1.0A |
| SBYV26F | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:SINTERED GLASS JUNCTION SURFACE MOUNTED RECTIFIER VOLTAGE： 200 to 1400V CURRENT: 1.0A |
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