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參數(shù)資料
| 型號： | SBT3904U |
| 廠商： | AUK Corp |
| 英文描述： | NPN Silicon Transistor |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 214K |
| 代理商： | SBT3904U |
KST-3071-000
2
SBT3904U
Absolute maximum ratings
Ta=25
°
C
Characteristic
Symbol
Collector-Base voltage
V
CBO
Collector-Emitter voltage
V
CEO
Emitter-base voltage
V
EBO
Collector current
I
C
Collector Power dissipation
P
C
Junction temperature
T
J
Storage temperature range
T
stg
* : Device mounted on 99.5% alumina 10
×
8
×
0.6mm
Electrical Characteristics
Ta=25
°
C
Characteristic
Symbol
Rating
60
40
6
200
350
150
-55~150
Unit
V
V
V
℃
℃
*
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=10
μ
A, I
E
=0
60
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
40
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
μ
A, I
C
=0
6
-
-
V
Collector cut-off current
I
CEX
V
CE
=30V, V
BE
=-3V
-
-
50
DC current gain
h
FE
V
CE
=1V, I
C
=10mA
100
-
300
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA,
f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
-
-
0.3
V
Transition frequency
f
T
300
-
-
Collector output capacitance
C
ob
-
-
4
Turn on delay time
t
d
-
-
35
Rise time
t
r
V
CC
=3V, V
BE(off)
=0.5V
I
C
=10mA, I
B1
=1mA
-
-
35
Storage time
t
s
-
-
200
Fall Time
t
f
V
CC
=3V,I
C
=10mA,
I
B1
=-I
B2
=1mA
-
-
50
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相關代理商/技術參數(shù) |
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| SBT3904UF | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor |
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