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參數(shù)資料
| 型號(hào)： | SBR2U30P1 |
| 廠商： | Diodes Inc. |
| 英文描述： | 2.0A SBR Super Barrier Rectifier |
| 中文描述： | 2.0安培SBR法超級(jí)壘整流器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 285K |
| 代理商： | SBR2U30P1 |
SBR2U30P1
2.0A SBR
Super Barrier Rectifier
PowerDI123
Features
Mechanical Data
Case: PowerDI123
Case Material: Molded Plastic, “Green” Molding
compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity Indicator: Cathode Band
Terminals: Matte Tin Finish annealed over
Copper leadframe. Solderable per MIL-STD-202,
Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Ultra Low Forward Voltage Drop
Superior Reverse Avalanche Capability
Patented Interlocking Clip Design for
High Surge Current Capacity
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150oC Operating Junction Temperature
±16KV ESD Protection (HBM, 3B)
±25KV ESD Protection (IEC61000-4-2 Level 4, Air Discharge)
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Molding Compound (No Br, Sb)
Qualified to AEC-Q 101 Standards for High Reliability
Maximum Ratings
@ T
A
= 25oC unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Avalanche Energy
(T
J
= 25°C, I
AS
= 5A, L = 8.5 mH)
Repetitive Peak Avalanche Energy
(T
P
= 1μs, T
j
= 25°C)
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Notes:
1. RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Note 7.
2. Theoretical R
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4
. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
__________
SBR is a registered trademark of Diodes Incorporated.
PowerDI is a trademark of Diodes Incorporated.
Symbol
V
RRM
V
RWM
V
RM
V
R(RMS)
I
O
Value
Unit
30
V
21
2.0
V
A
I
FSM
75
A
E
AS
105
mJ
P
ARM
1100
W
R
JS
R
JA
5
178
123
°C/W
T
J
, T
STG
-65 to +150
oC
SBR2U30P1 Rev. 4 - 2
1 of 4
www.diodes.com
January 2007
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| SBR2U30P1-7 | 功能描述:整流器 2A 30V Ultralow VF RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| SBR2U30SA-13 | 功能描述:肖特基二極管與整流器 SMA 2.0A RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SBR30 | 制造商:SEMTECH 制造商全稱:Semtech Corporation 功能描述:STANDARD RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS |
| SBR30016JS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Schottky Barrier Diode (Twin Type · Cathode Common) 160V, 30A Rectifier |
| SBR30100 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:VOLTAGE 100 V 30.0 Amp Schottky Barrier Rectifiers |
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