參數(shù)資料
型號： SBR10U45SD1
廠商： DIODES INC
元件分類： 參考電壓二極管
英文描述： 45 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù)： 1/3頁
文件大?。?/td> 101K
代理商： SBR10U45SD1
SBR10U45SD1
10A SBR
SUPER BARRIER RECTIFIER
SBR10U45SD1
Document number: DS31350 Rev. 2 - 2
1 of 3
www.diodes.com
March 2008
Diodes Incorporated
NEW
PRODUCT
SBR is a re
Features
Designed as Bypass Diodes for Solar Panels
Selectively Rated for 200C Maximum Junction Temperature
for High Thermal Reliability
Patented Super Barrier Rectifier Technology
High Forward Surge Capability
Ultra Low Forward Voltage Drop
Excellent High Temperature Stability
Lead Free Finish, RoHS Compliant (Note 2)
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Tin Plated Leads. Solderable per MIL-STD-
202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: TBD grams (approximate)
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
45
V
RMS Reverse Voltage
VR(RMS)
32
V
Average Rectified Output Current
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
200
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 3)
RθJA
54
C/W
VR ≤ 80% VRRM
-65 to +150
VR ≤ 50% VRRM
≤180
Operating Temperature Range
DC Forward Mode
TJ
≤200
C
Storage Temperature Range
TSTG
-65 to +175
C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V(BR)R
45
-
V
IR = 0.5mA
Forward Voltage Drop
VF
-
0.42
0.37
0.42
0.47
0.41
V
IF = 8A, TJ = 25C
IF = 10A, TJ = 25C
IF = 10A, TJ = 125C
Leakage Current (Note 1)
IR
-
0.051
-
27
0.3
15
75
mA
VR = 45V, TJ = 25C
VR = 45V, TJ = 100C
VR = 45V, TJ = 150C
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
3. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
gistered trademark of Diodes Incorporated
相關(guān)PDF資料
PDF描述
SBS004 1 A, 15 V, SILICON, SIGNAL DIODE
SBT150-04Y 15 A, 40 V, SILICON, RECTIFIER DIODE
SBT2907AU PNP Silicon Transistor
SBT2907AUF PNP Silicon Transistor
SBT2907F PNP Silicon Transistor (General purpose application Switching application)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SBR10U45SD1-T 功能描述:肖特基二極管與整流器 10A 45V PURE SN RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SBR10U45SP5 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SUPER BARRIER RECTIFIER
SBR10U45SP5-13 功能描述:肖特基二極管與整流器 10A 45V MATT TIN FINISH RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SBR10U60CT 功能描述:肖特基二極管與整流器 10A 60V ULTRALOW 10A 60V ULTRALOW VF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SBR10U60CT_08 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SUPER BARRIER RECTIFIER
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*