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參數(shù)資料
| 型號： | SBR02U100LP-7 |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 0.2A SBR㈢ Surface Mount Super Barrier Rectifier |
| 中文描述： | 0.25 A, 100 V, SILICON, SIGNAL DIODE |
| 封裝： | GREEN, PLASTIC, DFN1006-2, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 176K |
| 代理商： | SBR02U100LP-7 |
SBR02U100LP Rev. 4 – 2
1 of 4
www.diodes.com
October 2007
Diodes Incorporated
SBR02U100LP
0.2A SBR
Surface Mount Super Barrier Rectifier
Mechanical Data
Case: DFN1006-2
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: Cathode Dot
Terminals: Finish - NiPdAu over Copper
leadframe. Solderable per MIL-STD-202, Method
208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.001 grams
Features
N
Ultra Low Forward Voltage Drop
Superior Reverse Avalanche Capability
Patented Super Barrier Rectifier Technology
Soft, Fast Switching Capability
150oC Operating Junction Temperature
Lead Free Finish, RoHS Compliant (Note 1)
“Green” Molding Compound (No Br, Sb)
Qualified to AEC-Q101 Standards for High Reliability
Maximum Ratings
@ T
A
= 25oC unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
V
RRM
V
RWM
V
RM
V
R(RMS)
I
O
Value
Unit
100
V
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Maximum Thermal Resistance
Thermal Resistance, Junction to Ambient (Note 2) T
A
= 25oC
Thermal Resistance, Junction to Ambient (Note 3) T
A
= 25oC
70
250
V
mA
I
FSM
5
A
R
θ
JA
R
θ
JA
270
235
oC/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
oC
Electrical Characteristics
@ T
A
= 25oC unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 4)
V
(BR)R
100
-
-
V
I
R
= 1mA
Forward Voltage Drop
V
F
-
0.67
0.76
0.60
0.72
0.80
0.65
V
I
F
= 100mA, T
j
= 25oC
I
F
= 200mA, T
j
= 25oC
I
F
= 200mA, T
j
= 125oC
Leakage Current (Note 4)
I
R
-
0.04
6
1.0
50
μA
V
R
= 75V, T
j
= 25oC
V
R
= 75V, T
j
= 85oC
Notes:
1. RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Note 7.
2. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
3. Polyimide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
4. Short duration pulse test used to minimize self-heating effect.
SBR is a registered trademark of Diodes Incorporated.
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