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參數(shù)資料
| 型號(hào)： | SBM540-13-F |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 5 A, 40 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, POWERMITE 3, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 389K |
| 代理商： | SBM540-13-F |
e
3
Note:
Pins 1 & 2 must be electrically P
connected at the printed circuit board. All Dimensions in mm
DS30297 Rev. 6 - 2
1 of 3
SBM540
www.diodes.com
Diodes Incorporated
SBM540
5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITE
a
3
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
·
Case: POWERMITE
a
3
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish).
Polarity: See Diagram
Marking: Type Number, See also Sheet 3
Ordering Information, See Sheet 3
Weight: 0.072 grams (approximate)
·
·
·
·
·
·
·
·
Mechanical Data
B
C
D
E
G
J
H
K
L
M
A
P
1
2
3
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
C
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (see also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
@ T
C
= 90
°
C
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
40
V
28
5
V
A
I
FSM
100
A
R
q
JS
T
j
T
STG
3.2
°
C/W
°
C
°C
-55 to +125
-55 to +150
·
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 2)
·
·
·
·
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
V
(BR)R
Min
Typ
Max
Unit
Test Condition
I
R
= 0.5mA
I
F
= 5A, T
S
= 25
°
C
I
F
= 5A, T
S
= 125
°
C
I
F
= 10A, T
S
= 25
°
C
I
F
= 10A, T
S
= 125
°
C
T
S
= 25
°
C, V
R
= 40V
T
S
= 100
°
C, V
R
= 40V
f = 1.0MHz, V
R
= 4.0V DC
Reverse Breakdown Voltage (Note 1)
40
V
Forward Voltage
V
FM
0.48
0.45
0.59
0.56
0.05
2.5
250
0.52
V
Reverse Current (Note 1)
I
RM
0.5
20
mA
Total Capacitance
C
T
pF
POWERMITE
a
3
Dim
Min
A
4.03
B
6.40
C
D
E
1.10
G
H
5.01
J
4.37
K
L
.71
M
.36
1.73
Max
4.09
6.61
.889 NOM
1.83 NOM
1.14
.178 NOM
5.17
4.43
.178 NOM
.77
.46
1.83
Notes: 1. Short duration test pulse used to minimize self-heating effect.
2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see
EU Directive Annex Note 7.
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