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參數(shù)資料
| 型號(hào)： | SBLB25L25CT-HE3/45 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 12.5 A, 25 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | SBLB25L25CT-HE3/45 |
SBL(F,B)25L20CT thru SBL(F,B)25L30CT
Vishay General Semiconductor
Document Number: 88731
Revision: 08-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Low VF Common Cathode Schottky Rectifier
FEATURES
Low power loss, high efficiency
Very low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
switching mode power supplies, freewheeling diodes,
OR-ing diodes, dc-to-dc converters and polarity
protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
12.5 A x 2
VRRM
20 V to 30 V
IFSM
180 A
VF
0.39 V
TJ max.
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL25LxxCT
ITO-220AB
SBLF25LxxCT
SBLB25LxxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL25L20CT
SBL25L25CT
SBL25L30CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
25
30
V
Maximum average forward rectified
current at TC = 95 °C
total device
per diode
IF(AV)
25
12.5
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
180
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SBLB25L25CT-HE3/81 | 12.5 A, 25 V, SILICON, RECTIFIER DIODE, TO-263AB |
| SBLB25L30CT-E3/81 | 12.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-263AB |
| SBLF25L30CT-HE3/45 | 12.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBLB25L30CT-E3/45 | 12.5 A, 30 V, SILICON, RECTIFIER DIODE, TO-263AB |
| SBL25L20CT-HE3/45 | 12.5 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB |
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