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參數(shù)資料
| 型號(hào)： | SBJ2640 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 18 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, ITO-220AC, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | SBJ2640 |
SBJ2620 ... SBJ2645
SBJ2620 ... SBJ2645
Schottky Barrier Rectifier Diodes – Single Diode
Schottky-Barrier-Gleichrichterdioden – Einzeldiode
Version 2010-09-30
Dimensions - Mae [mm]
Nominal current
Nennstrom
26 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...45 V
Isolated plastic case
Isoliertes Kunststoffgehuse
ITO-220AC
Weight approx.
Gewicht ca.
1.8 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stospitzensperrspannung
VRSM [V]
Forward voltage
Durchlass-Spannung
IF = 5 A
IF = 26 A
SBJ2620
20
< 0.50
< 0.58
SBJ2630
30
< 0.50
< 0.58
SBJ2640
40
< 0.50
< 0.58
SBJ2645
45
< 0.50
< 0.58
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
18 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
55 A 2)
Peak forward surge current, 50/60 Hz half sine-wave
Stostrom für eine 50/60 Hz Sinus-Halbwelle
SBJ2620...
SBJ2645
TA = 25°C
IFSM
280/320 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
390 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
-50...+150°C
≤ 200°C
1
Tj = 25°C
2
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehuses TC = 100°C
Diotec Semiconductor AG
http://www.diotec.com/
1
3
1
Type
Typ
5.08±0.1
0.7±0.2
1.3
10.1±0.3
3.
8
±
0.
3
2.
7
±
0.
2
13
.6
15
±
0.
3
±0.2
3.2
2.6±0.2
0.6
±0.1
8.
4
4.5±0.2
2.6±0.2
3
1
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參數(shù)描述 |
|---|---|
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