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參數資料
| 型號： | SBG3030CT-T-F |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 15 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SBG3030CT-T-F |
DS30025 Rev. 5 - 2
1 of 2
SBG3030CT - SBG3060CT
www.diodes.com
Diodes Incorporated
SBG3030CT - SBG3060CT
30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Case: D
2
PAK
Case Material
:
Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Solderable per
MIL-STD-202, Method 208
Ordering Information, Page 2
Polarity: See Diagram
Marking: Type Number
Mounting Position: Any
Weight: 1.7 grams (approximate)
Mechanical Data
B
C
D
E
G
H
J
K
L
M
A
1
2
3
4
PIN 1
PIN 3
PIN 2 & 4
D
2
PAK
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
9.65
10.69
14.60
15.88
0.51
1.14
2.29
2.79
4.37
4.83
1.14
1.40
1.14
1.40
8.25
9.25
0.30
0.64
2.03
2.92
2.29
2.79
Characteristic
Symbol
SBG
3030CT
SBG
3040CT
SBG
3045CT
SBG
3050CT
SBG
3060CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage, per Element
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
30
40
45
50
60
V
21
28
32
30
35
42
V
A
@ T
C
= 100 C
I
FSM
250
A
@ I
F
= 15A, T
C
= 25 C
@ T
C
= 25 C
@ T
C
= 100 C
V
FM
0.55
0.70
V
I
RM
1.0
75
420
1.5
mA
C
j
pF
K/W
C
R
JC
T
j,
T
STG
-65 to +150
Notes: 1. Thermal resistance: junction to case mounted on heat sink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 250A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish/RoHS Compliant Version (Note 3)
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