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參數(shù)資料
| 型號： | SBF2060CT |
| 廠商： | LITE-ON ELECTRONICS INC |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | SBF2060CT |
SBF2050CT thru 2060CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : ITO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance Junction to Case.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
Maximum Average Forward
Rectified Current (See Fig.1)
@TC
=95 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward Voltage
at 10A DC (Note 1)
20
225
TJ
Operating Temperature Range
-55 to +150
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 3)
R0JC
2.5
C/W
CJ
Typical Junction Capacitance
per element (Note 2)
420
pF
IR
@TJ=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25 C
1
50
mA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
SBF2050CT
50
35
50
SBF2060CT
60
42
60
0.75
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 50 to 60 Volts
FORWARD CURRENT - 20 Amperes
SEMICONDUCTOR
LITE-ON
REV. 1, Aug-2007, KTHC36
ITO-220AB
All Dimensions in millimeter
ITO-220AB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
15.50
16.50
10.40
10.0
3.00
3.50
9.30
9.00
2.90
3.60
13.46
14.22
1.15
1.70
0.75
2.70
N
M
L
K
J
I
1.00
2.40
0.70
0.45
3.00
3.30
4.36
4.77
2.48
2.80
2.50
G
I
C
E
J
B
K
A
M
D
L
N
F
H
PIN
1
2
3
Vdis
V
Dielectric Strengh from terminals to case,
AC with t=1 minute, RH<30%
2000
PIN 1
PIN 3
PIN 2
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