
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SB820 THRU SB860
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 60V CURRENT: 8.0A
FEATURES
Epitaxial construction for chip
High current capability
Low forward voltage drop
Low power loss, high efficiency
High surge capability
High temperature soldering guaranteed:
250
o
C/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
MECHANICAL DATA
Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
Polarity: As marked
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25
o
C, unless otherwise stated, for capacitive
load, derate current by 20%)
SYMBOL
SB
820
20
14
20
SB
830
30
21
30
SB
835
35
25
35
SB
840
40
28
40
SB
850
50
35
50
SB
860
60
42
60
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
C
=95
o
C)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Forward Voltage (at 8.0A DC)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance
Typical Thermal Resistance
Operating Junction Temperature
Storage Temperature
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal resistance from junction to case
3. Suffix "R" for reverse polarity
V
RRM
V
RMS
V
DC
V
V
V
V
F
V
T
a
=25
o
C
T
a
=100
o
C
(Note 1)
(Note 2)
mA
mA
pF
o
C/W
o
C
o
C
C
J
R
θ
(ja)
T
J
T
STG
http://www.sse-diode.com
RATINGS
8.0
150
0.65
0.75
I
R
5.0
50.0
700
450
2.5
-65 to +125
-65 to +150
-65 to +150
I
F(AV)
I
FSM
A
A
TECHNICAL
SPECIFICATION
Dimensions in inches and (millimeters)
TO-220A