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參數(shù)資料
| 型號(hào)： | SB3H90-HE3/73 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | SB3H90-HE3/73 |
www.vishay.com
2
Document Number 88720
18-May-06
Vishay General Semiconductor
SB3H90 & SB3H100
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB3H90
SB3H100
UNIT
Maximum thermal resistance (1)
RθJA
RθJL
50
20
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SB3H100-E3/54
1.09
54
1400
13" Diameter Paper Tape & Reel
SB3H100-E3/73
1.09
73
1000
Ammo Pack Packaging
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
25
50
75
100
125
150
175
0
1.0
2.0
3.0
4.0
Resistive or Inductive Load
0.375" (9.5 mm) lead length
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
1
10
100
20
10
40
60
80
100
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
TJ = 100 °C
TJ = 150 °C
TJ = 125 °C
TJ = 175 °C
TJ = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
20
40
60
80
100
0.01
0.1
1
10
100
1000
TJ = 100 °C
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
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