參數(shù)資料
型號(hào)： SB330-E3/73
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù)： 1/4頁
文件大?。?/td> 65K
代理商： SB330-E3/73
Document Number: 88719
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Schottky Barrier Rectifier
SB320 thru SB360
Vishay General Semiconductor
FEATURES
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
20 V to 60 V
IFSM
120 A
VF
0.49 V, 0.68 V
TJ max.
125 °C, 150 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB320
SB330
SB340
SB350
SB360
UNIT
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current
at 0.375" (9.5 mm) lead length (fig. 1)
IF(AV)
3.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
120
A
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SB320
SB330
SB340
SB350
SB360
UNIT
Maximum instantaneous forward voltage
3.0 A
VF (1)
0.49
0.68
V
Maximum instantaneous reverse current
at rated DC blocking voltage
TA = 25 °C
IR (1)
0.5
mA
TA = 100 °C
20
10
相關(guān)PDF資料
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SB38W 3 A, SILICON, BRIDGE RECTIFIER DIODE
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SB605W SILICON, BRIDGE RECTIFIER DIODE
SB610W SILICON, BRIDGE RECTIFIER DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SB330H 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS
SB330L 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:3.0A LOW VF SCHOTTKY BARRIER RECTIFIER
SB330S 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Barrier Rectifier
SB330S-E3/54 功能描述:肖特基二極管與整流器 3.0 Amp 30 Volt 100 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SB330SVF 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SCHOTTKY BARRIER RECTIFIER DIODES
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