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參數(shù)資料
| 型號(hào)： | SB3060LDC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | SB3060LDC |
PAGE . 1
April 6,2011-REV.00
SB3060LDC
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
60 Volts
30 Amperes
FEATURES
Low forward voltage drop, low power losses
High efficiency operation
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : TO-263, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0514 ounces, 1.46 grams
CURRENT
MAXIMUM RATINGS(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
V
RRM
60
V
Maximum average forward rectified current
per device
per diode
I
F(AV)
30
15
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
per diode
I
FSM
250
A
Typical thermal resistance
per diode
R
Θ
JA
R
Θ
JC
50
4.0
O
C/W
Operating junction temperature range
T
J
-55 to + 125
o
C
Storage temperature range
T
STG
-55 to + 150
o
C
ELECTRICAL CHARACTERISTICS(T
A
=25
o
C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Breakdown voltage per diode
V
BR
I
R
=1mA
60
-
-
V
Instantaneous forward voltage per
diode
V
F
I
F
=5A
I
F
=7.5A
I
F
=15A
I
F
=5A
I
F
=7.5A
I
F
=15A
T
J
=25
o
C
-
-
-
-
-
-
0.40
0.43
0.51
0.30
0.35
0.47
-
-
0.60
-
-
0.52
V
T
J
=125
o
C
V
Reverse current per diode
I
R
V
R
=48V
-
80
-
μ
A
V
R
=60V
T
A
=25
o
C
T
A
=100
o
C
-
-
200
30
480
100
μ
A
mA
0.409(10.4)
0.387(9.80)
0.110(2.8)
0.055(1.4)
0.039(1.0)
0.108(2.75)
0.092(2.35)
0.108(2.75)
0.092(2.35)
0
0
0
0
0.35(0.9)MAX.
0.189(4.8)
0.137(4.4)
0.055(1.4)
0.047(1.2)
0.026(0.7)
0.011(0.3)
0.236(6.0)
0.197(5.0)
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