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參數(shù)資料
| 型號： | SB3045LCT |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 72K |
| 代理商： | SB3045LCT |
PAGE . 1
June 15,2010-REV.02
SB3045LCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE
45 Volts
30 Amperes
FEATURES
Low forward voltage drop, low power losses
High efficiency operation
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams
CURRENT
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
.058(1.47)
.042(1.07)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
V
Maximum average forward rectified current
per device
per diode
I F(AV)
30
15
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diode
I FSM
250
A
Typ i c a l the r m a l r e s i s t a nc e
RΘJC
2. 5
O C/ W
Operating junction
TJ
-55 to + 125
oC
Storage temperature range
TSTG
-55 to + 150
oC
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Breakdown voltage
VBR
I R=1mA
45
-
V
Instantaneous forward voltage per
diode (1)
VF
I F=15A
I F=30A
TA=25oC
-
0.53
0.72
V
I F=15A
I F=30A
TA=125oC
-
0.42
0.59
0.50
0.67
V
Reverse current per diode (2)
I R
VR=60V
TA=25oC
TA=125oC
-
0.4
200
mA
Note : 1. Pulse test : tp < 380
μs, δ< 2%
2. Pulse test : Pulse width < 2.5ms
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