
NOTES : 1.Thermal Resistance Junction to Ambient.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
VRMS
VDC
VRRM
I(AV)
IFSM
VF
@TA
=75 C
SB220 thru SB260
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low voltage,high frequency inverters,free
wheeling,and polarity protection applications
MECHANICAL DATA
Case : JEDEC DO-15 molded plastic
Polarity : Color band denotes cathode
Weight : 0.015 ounces, 0.4 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SB230
30
21
30
SB220
20
14
20
SB260
60
42
60
SB250
50
35
50
SB240
40
28
40
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 2.0A DC
2.0
60
0.55
TJ
Operating Temperature Range
-55 to +125
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 1)
R0JA
20
C/W
CJ
Typical Junction
Capacitance (Note 2)
150
pF
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=100 C
@TJ=25 C
0.5
15
mA
V
A
V
UNIT
V
All Dimensions in millimeter
Max.
Min.
DO-15
Dim.
A
D
C
B
25.4
7.60
-
5.80
0.71
2.60
3.60
0.86
DO-15
A
C
D
A
B
CHARACTERISTICS
SYMBOL
Maximum forward Voltage at 1.5A DC
0.7
0.65
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 20 to 60 Volts
FORWARD CURRENT - 2.0 Amperes
-----
SEMICONDUCTOR
LITE-ON
REV. 4, Apr-2005, KDHD01
-55 to + 150
DO-15