參數(shù)資料
型號(hào): SB250-E3
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AC
封裝: LEAD FREE, PLASTIC, DO-15, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 339K
代理商: SB250-E3
SB220 thru SB260
Document Number 88717
14-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AC (DO-15)
New Product
Schottky Barrier Rectifiers
Major Ratings and Characteristics
IF(AV)
2.0 A
VRRM
20 V to 60 V
IFSM
60 A
VF
0.50 V, 0.68 V
Tj max.
125 °C, 150 °C
Features
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-204AC (DO-15)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
SB220
SB230
SB240
SB250
SB260
Unit
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current at
0.375" (9.5 mm) lead length (See Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load
IFSM
60
A
Maximum Full Load Reverse Current,
Full Cycle Average at TA = 75 °C
IR(AV)
30
mA
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
相關(guān)PDF資料
PDF描述
SB260 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-204AC
SB230-E3 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-204AC
SB260/3 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-204AC
SB260/73 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-204AC
SB230 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-15
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