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參數(shù)資料
| 型號(hào)： | SB2045LFCT |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 81K |
| 代理商： | SB2045LFCT |
PAGE . 1
May 13,2010-REV.01
SB2045LFCT
DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER
VOLTAGE
45 Volts
20 Amperes
FEATURES
Low forward voltage drop, low power losses
High efficiency operation
In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.055 ounces, 1.5615 grams
CURRENT
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
Note.1.Pulse test : 300
μs pulse width, 1% duty cycle
2.Pulse test : pulse width < 40ms
.027(.67)
.022(.57)
.177(4.5) .137(3.5)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
V
Maximum average forward rectified current
per device
per diode
I F(AV)
20
10
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diode
I FSM
145
A
Typ i c a l t her m a l r e si st ance
RΘJC
4. 5
O C / W
Operating junction
TJ
-55 to + 125
oC
Storage temperature range
TSTG
-55 to + 150
oC
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Breakdown voltage
VBR
I R=1mA
50
-
V
Instantaneous forward voltage per
diode (1)
VF
I F=5A
I F=10A
TJ=25oC
-
0.42
0.46
0.52
V
Reverse current per diode (2)
I R
VR=45V
TJ=25oC
TJ=100oC
-
100
-
500
100
μA
mA
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