
SB2030PT – SB2060PT
1 of 3 2002 Won-Top Electronics
SB2030PT – SB2060PT
20A SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip H
!
Guard Ring for Transient Protection
!
High Current Capability, Low Forward
!
Low Reverse Leakage Current S
!
High Surge Current Capability J
!
Plastic Material has UL Flammability R K
Classification 94V-O
PIN1 2 3
L P
Mechanical Data
N
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per M
MIL-STD-750, Method 2026 A
!
Polarity: As Marked on Body B
!
Weight: 5.6 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number C
PIN 1 - +
PIN 3 - Case PIN 2
G
D
E
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB
2030PT
SB
2035PT
SB
2040PT
SB
2045PT
SB
2050PT
SB
2060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current @T
C
= 100°C
I
O
20
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
250
A
Forward Voltage @I
F
= 10A
V
FM
0.55
0.75
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
1.0
50
mA
Typical Junction Capacitance (Note 1)
C
j
1100
pF
Typical Thermal Resistance Junction to Case (Note 2)
R
JC
2.5
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
W TE
POWER SEMICONDUCTORS
TO-3P
Min
3.20
4.59
20.80
19.70
2.10
0.51
15.90
1.70
3.10
3.50
5.20
1.12
2.90
11.70
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
R
S
Max
3.50
5.16
21.30
20.20
2.40
0.76
16.40
2.70
3.30
4.51
5.70
1.22
3.30
12.80
4.30 Typical
All Dimensions in mm