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參數(shù)資料
| 型號(hào)： | SB180 |
| 廠(chǎng)商： | DIODES INC |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | SB180 |
D
S
30116 Rev. B-1
1 of 2
SB170 - SB1100
SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 25A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260 C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
A
A
B
C
D
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
SB170
SB180
SB190
SB1100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ I
F
= 1.0A
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
70
80
90
100
V
49
56
63
70
V
A
@ T
T
= 85 C
1.0
I
FSM
25
A
@ T
A
= 25 C
@ T
A
= 25 C
@ T
A
= 100 C
V
FM
0.80
0.5
10
80
15
50
V
I
RM
mA
C
j
pF
K/W
K/W
C
R
JL
R
JA
T
j,
T
STG
-65 to +125
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DO-41
Min
Dim
A
B
C
D
Max
25.4
4.1
5.2
0.71
0.86
2.0
2.7
All Dimensions in mm
N
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