
SB1630 – SB1660
1 of 3 2002 Won-Top Electronics
SB1630 – SB1660
16A SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip B
!
Guard Ring for Transient Protection
!
High Current Capability, Low Forward C
!
Low Reverse Leakage Current
!
High Surge Current Capability G A
!
Plastic Material has UL Flammability
Classification 94V-O
PIN1 2
D
Mechanical Data
F
E
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per P
MIL-STD-202, Method 208
!
Polarity: See Diagram I
!
Weight: 2.24 grams (approx.) L
!
Mounting Position: Any H
!
Marking: Type Number
PIN 1 + +
J
PIN 2 - Case
K
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB1630 SB1635 SB1640 SB1645 SB1650 SB1660
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
35
40
45
50
60
V
RMS Reverse Voltage
V
R(RMS)
21
24.5
28
31.5
35
42
V
Average Rectified Output Current @T
C
= 95°C
I
O
16
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
FSM
275
A
Forward Voltage @I
F
= 16A
V
FM
0.57
0.75
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
1.0
50
mA
Typical Junction Capacitance (Note 1)
C
j
700
pF
Typical Thermal Resistance Junction to Case (Note 2)
R
JC
3.5
K/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
W TE
POWER SEMICONDUCTORS
TO-220A
Min
14.9
—
2.62
3.56
13.46
0.68
3.74
5.84
4.44
2.54
0.35
1.14
4.95
Dim
A
B
C
D
E
F
G
H
I
J
K
L
P
Max
15.1
10.5
2.87
4.06
14.22
0.94
3.91
6.86
4.70
2.79
0.64
1.40
5.20
All Dimensions in mm