參數(shù)資料
型號: SB120
廠商: LITE-ON SEMICONDUCTOR CORP
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 2/2頁
文件大?。?/td> 132K
代理商: SB120
RATING AND CHARACTERISTIC CURVES
SB120 thru SB140
FIG.1- FORWARD CURRENT DERATING CURVE
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
LEAD TEMPERATURE, ( ℃)
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.2- MAXIMUM NON-REPETITIVE SURGE
CURRENT
0
5
10
15
20
25
30
35
40
1
10
100
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,(
A
)
FIG.3- TYPICAL JUNCTION CAPACITANCE
10
100
1
10
100
REVERSE VOLTAGE, VOLTAGES
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
0.01
0.1
1
10
0
0.1 0.2
0.3
0.4 0.5
0.6
0.7 0.8
0.9
1
1.1
1.2
1.3 1.4
1.5
INST ANTANEOUS F ORWARD VOLT AGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,(
A
)
FIG.5- TYPICAL REVERSE CHARACTERISTICS
0.0001
0.001
0.01
0.1
1
10
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLT AGE, (%)
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(m
A
)
FIG.6- DC REVERSE VOLTAGE DERATING CURVE
0
20
40
60
80
100
120
0
25
50
75
100
125
AMBIENT TEMPERATURE, (
℃)
P
E
R
C
E
N
T
O
F
D
C
R
E
V
E
R
S
E
V
O
L
T
A
G
E
,
(%
)
Tj=25℃
Tj=25℃, f=1MHz
8.3ms Single Half Sine-Wave
Tj=100℃
Mounted pad on glass-epoxy
substrate with 1oz/ft
2_2x2mm
Through hole diameter_1.0mm
Rth j-a in Still-air=60℃/W
相關(guān)PDF資料
PDF描述
SB130 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41
SB130 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
SB150 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
SB2045CT 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
SB2020CT 10 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AB
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