參數(shù)資料
型號: SB120
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL
封裝: PLASTIC, DO-41, 2 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 327K
代理商: SB120
SB120 thru SB160
Document Number 88715
14-Jul-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
Instantaneo
u
sF
o
rw
ard
C
u
rrent
(A)
50
10
1.0
0.1
0.01
TJ = 125 °C
InstantaneousForward Voltage (V)
0
0.4
0.2
1.2
0.8
0.6
1.4
1.6
1.0
Pulse Width = 300 ms
1% Duty Cycle
TJ =25 °C
TJ = 150 °C
SB120 - SB140
SB150 & SB160
Instantaneo
u
sR
e
v
erse
C
u
rrent
(mA)
1.0
10
100
0.01
0.001
0.1
TJ = 125 °C
0
20
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
TJ =75 °C
TJ =25 °C
SB120 - SB140
SB150 & SB160
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
J
u
nction
Capacitance
(pF)
110
100
400
10
0.1
Reverse Voltage (V)
TJ =25 °C
f = 1.0 MHZ
Vsig = 50mVp-p
SB120
SB140
SB150 & SB160
-
T
ransient
T
her
mal
Impedance
C
/W
)
0.01
110
100
10
100
0.1
1
Pulse Duration (sec.)
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
DO-204AL (DO-41)
相關(guān)PDF資料
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SB220-BP 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-15
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