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參數(shù)資料
| 型號(hào)： | SB106G |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers |
| 中文描述： | 單相10.0安培。玻璃鈍化整流橋 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 71K |
| 代理商： | SB106G |
- 757 -
RATINGS AND CHARACTERISTIC CURVES (SB101G THRU SB107G)
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
I
0
20
40
60
80
100
120
140
0.1
1
10
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
TJ=125 C
0
TJ=25 C
0
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
A
50
0
100
150
0
2
4
6
10
12
8
AMBIENT TEMPERATURE. ( C)
o
MOUNTED ON 4X4 INCH
COPPER PC BOARD
0.5"(12.7mm) LEAD LENGTH
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER BRIDGE ELEMENT
100
I
0.7
0.6
0.8
1.0
0.9
1.1
1.2
1.3
0.1
0.4
4
40
0.2
2
20
1
10
INSTANTANEOUS FORWARD VOLTAGE. (V)
Tj=25 C
PULSE WIDTH-300 S
0
FIG.1- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER BRIDGE ELEMENT
P
10
5
50
2
1
20
100
100
50
0
150
250
350
300
200
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SB107G | Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers |
| SB102 | Single Phase 10 AMPS. Silicon Bridge Rectifiers |
| SB105 | Single Phase 10 AMPS. Silicon Bridge Rectifiers |
| SB103 | Single Phase 10 AMPS. Silicon Bridge Rectifiers |
| SB104 | Single Phase 10 AMPS. Silicon Bridge Rectifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SB106P125-W-AG | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 106 Mils, 125 Volt, 10 Amp |
| SB106P125-W-AG/AL | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 106 Mils, 125 Volt, 10 Amp |
| SB106P150-W-AG | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 106 Mils, 150 Volt, 10 Amp |
| SB106P200-W-AG | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp |
| SB106P200-W-AG/AL | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Schottky Barrier Diode Wafer 106 Mils, 200 Volt, 10 Amp |
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