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參數(shù)資料
| 型號： | SB090P200-W-AG |
| 英文描述： | Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp |
| 中文描述： | 肖特基二極管晶圓90米爾斯，200伏，8安培 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 162K |
| 代理商： | SB090P200-W-AG |
Data Sheet
Third Angle Protection
μm
420 +/- 20
Symbol
Cathode
Anode
Solderable
Surface Ti/Ni/Ag
Cathode
Dimensions in mils (mm)
(2) The characteristics above assume the die are assembled in
indusry standard packages using appropriate attach methods.
Mechanical Dimensions
Wafer
Die
SCD0905-1
Page 1 of 1
Transys Electronics LTD
Birmingham UK.
Email:
sales@transyselectronics.com
Website:
www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed to
be accurate and may be changed without notice at anytime. Liability will not be accepted by
Transys Electronics LTD for any consequences whatsoever in its use. This publication does
not convey nor imply any license under patent or other intellectual/industrial property rights.
The products within this specification are not designed for use in any
life support
apparatus
whatsoever where malfunction can be reasonably expected to cause personal
injury or death. Customers using these products in the aforementioned applications do so at
their own risk and agree to fully indemnify Transys Electronics LTD for any damage/ legal
fees either direct, incidental or consequential from this improper use or sale.
SB090P200-W-Ag/Al
Schottky Barrier Diode Wafer
90 Mils, 200 Volt, 8 Amp
200
V
RRM
Maximum Repetitive Reverse Voltage (2)
Electrical Characteristics @ 25
Reverse Leakage Current (2)
I
R
C
Volt
10
Storage Temperature Range (2)
T
J
-65 to +150
C
SB090P200-W-Ag/Al
(See ordering code below)
I
F(AV)
8
Typical Average Forward Rectified Current (2)
μA
Junction Operating Temperature Range (2)
T
SG
-65 to +150
Maximum Forward Voltage (1)(2)
V
F
Volt
Amp
0.85
Symbol
Unit
Reverse Leakage Current @ 125 C (2)
I
R
mA
C
(1) Pulse Width tp = < 300μS, Duty Cycle <2%
90.0
(2.28)
82.6
(2.1)
1. Solderable Surface Ti/Ni/Ag - Suffix "Ag"
2. Wire Bond Surface Aluminium - Suffix "Al"
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - Ti/Ni/Ag (Suffix "Ag")
or Aluminium (Suffix "Al")
Bottom (cathode) Ti/Ni/Ag
82.6
(2.1)
90.0
(2.28)
Features
Oxide Passivated Junction
Low Forward Voltage
150 o C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Platinum Barrier
Schottky Barrier 40 Mils Pt Barrier 150 Volt Wafer Ti/Ni/Ag
Ordering Code
SB040P150-W-Ag
5
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