參數(shù)資料
型號： SB060C020-3-W-AG
英文描述： Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF.
中文描述： 肖特基勢壘二極管晶圓河60米爾斯，20伏，3安培，0.38VF。
文件頁數(shù)： 1/1頁
文件大?。?/td> 163K
代理商： SB060C020-3-W-AG
Data Sheet
Third Angle Protection
μm
420 +/- 20
Symbol
Cathode
Anode
Ti-Ni-Ag
Dimensions in mils (mm)
(2) The characteristics above assume the die are assembled in
industry standard packages using appropriate attach methods.
Mechanical Dimensions
Wafer
Die
SCD0979-1
Page 1 of 1
Transys Electronics LTD
Email:
sales@transyselectronics.com
Website:
www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed
to be accurate and may be changed without notice at anytime. Liability will not be
accepted by Transys Electronics LTD for any consequences whatsoever in its use. This
publication does not convey nor imply any license under patent or other
intellectual/industrial property rights. The products within this specification are not
designed for use in any
life support apparatus
whatsoever where malfunction can be
reasonably expected to cause personal injury or death. Customers using these products
in the aforementioned applications do so at their own risk and agree to fully indemnify
Transys Electronics LTD for any damage/ legal fees either direct, incidental or
consequential from this improper use or sale.
SB060C020-3-W-Ag
Schottky cr Barrier Diode Wafer
60 Mils, 20 Volt, 3 Amp, 0.38V
F.
20
V
RRM
Maximum Repetitive Reverse Voltage (2)
Electrical Characteristics @ 25
Reverse Leakage Current @ V
R
= 20V (2)
I
R(1)
C
Volt
800
SB060C020-3-W-Ag (See ordering code below)
I
F(AV)
3.0
Typical Average Forward Rectified Current (2)
μA
Maximum Forward Voltage @ I
F
= 3.0A (1)(2)
V
F
Volt
Amp
0.38
Symbol
Unit
Reverse Leakage Current @ V
R
=20V, 125
O
C (2)
I
R(2)
mA
Storage Temperature Range (2)
T
J
-45 to +125
C
Junction Operating Temperature Range (2)
T
SG
-45 to +125
C
(1) Pulse Width tp = < 300μS, Duty Cycle <2%
Cr-Al-Ni-Ag - Suffix "Ag"
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - CR/Ti/Ni/Ag (Suffix "Ag")
Bottom (cathode) Ti/Ni/Ag
Scribe line Width
80 μM
50
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 o C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Schottky Barrier 65 Mils CR Barrier 40Volt 3 Amp Wafer CR/Ti/Ni/Ag
Ordering Code
SB065C040-3-W-Ag
ESD Machine Model (MM)
V
ESD(mm)
Volt
>1000
e.g.
59.05
(1.500)
51.9
(1320)
59.05
(1.500)
51.9
(1320)
相關(guān)PDF資料
PDF描述
SB063P150-W-AG Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp
SB063P200-W-AG Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp
SB065C015-2-W-AG Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 2 Amp, 0.32VF.
SB065C015-3-W-AG Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF.
SB065C025-3-W-AG Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.
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SB060-E3/23 功能描述:肖特基二極管與整流器 60 Volt 0.6 Amp 20 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SB060-E3/51 功能描述:肖特基二極管與整流器 60 Volt 0.6 Amp 20 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
SB060-E3/54 功能描述:肖特基二極管與整流器 60 Volt 0.6 Amp 20 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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