參數(shù)資料
型號(hào)： SB039C040-1-W-AG
英文描述： Schottky cr Barrier Diode Wafer 39 Mils, 40 Volt, 1 Amp, 0.40VF.
中文描述： 肖特基勢(shì)壘二極管晶圓河39米爾斯，40伏，1安培，0.40VF。
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 162K
代理商： SB039C040-1-W-AG
Data Sheet
Third Angle Protection
μm
420 +/- 20
Symbol
Cathode
Anode
Ti-Ni-Ag
Dimensions in mils (mm)
(2) The characteristics above assume the die are assembled in
industry standard packages using appropriate attach methods.
Mechanical Dimensions
Wafer
Die
SCD0967-1
Page 1 of 1
Transys Electronics LTD
Email:
sales@transyselectronics.com
Website:
www.transyselectronics.com
Tel: + 44 (0) 121 776 6321
Fax: + 44 (0) 121 776 6997
The information in this datasheet does not form part of any contract, quotation
guarantee,warranty or representation, it has been produced in good faith and is believed
to be accurate and may be changed without notice at anytime. Liability will not be
accepted by Transys Electronics LTD for any consequences whatsoever in its use. This
publication does not convey nor imply any license under patent or other
intellectual/industrial property rights. The products within this specification are not
designed for use in any
life support apparatus
whatsoever where malfunction can be
reasonably expected to cause personal injury or death. Customers using these products
in the aforementioned applications do so at their own risk and agree to fully indemnify
Transys Electronics LTD for any damage/ legal fees either direct, incidental or
consequential from this improper use or sale.
SB039C040-1-W-Ag
Schottky cr Barrier Diode Wafer
39 Mils, 40 Volt, 1 Amp, 0.40V
F.
40
V
RRM
Maximum Repetitive Reverse Voltage (2)
Electrical Characteristics @ 25
Reverse Leakage Current @ V
R
= 40V (2)
I
R(1)
C
Volt
500
SB039C040-1-W-Ag (See ordering code below)
I
F(AV)
1.0
Typical Average Forward Rectified Current (2)
μA
Maximum Forward Voltage @ I
F
= 1.0A (1)(2)
V
F
Volt
Amp
0.40
Symbol
Unit
Reverse Leakage Current @ V
R
= 40V, 125
O
C (2)
I
R(2)
mA
Storage Temperature Range (2)
T
J
-45 to +125
C
Junction Operating Temperature Range (2)
T
SG
-45 to +125
C
(1) Pulse Width tp = < 300μS, Duty Cycle <2%
Cr-Al-Ni-Ag - Suffix "Ag"
Wafer Diameter - 100 mm (4")
Wafer Thickness 420 +/- 20
Top (Anode) - CR/Ti/Ni/Ag (Suffix "Ag")
Bottom (cathode) Ti/Ni/Ag
Scribe line Width
80 μM
15
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 o C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Schottky Barrier 65 Mils CR Barrier 40Volt 3 Amp Wafer CR/Ti/Ni/Ag
Ordering Code
SB065C040-3-W-Ag
ESD Machine Model (MM)
V
ESD(mm)
Volt
>1000
e.g.
39.37
(1.000)
39.37
(1.000)
32.2
(0.820)
32.2
(0.820)
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