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參數(shù)資料
| 型號(hào)： | SA |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | SA |
LBSS123LT1–1/4
LESHAN RADIO COMPANY, LTD.
1
3
SOT
-
23
2
LBSS123LT1
3
1
2
Gate
Source
Drain
N-CHANNEL POWER MOSFET
LBSS123LT1
FEATURE
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS123LT1
SA
3000/Tape&Reel
LBSS123LT1G
SA
(Pb-Free)
3000/Tape&Reel
LBSS123LT3
SA
10000/Tape&Reel
LBSS123LT3G
SA
(Pb-Free)
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
100
Vdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
μ
s)
VGS
VGSM
±
20
±
40
Vdc
Vpk
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
ID
IDM
0.17
0.68
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to
Ambient
RJA
556
°
C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°
C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width
300 s, Duty Cycle
3. FR–5 = 1.0
0.75
0.062 in.
2.0%.
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