參數(shù)資料
型號(hào): SA9503
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: Dual-band, CDMA/AMPS LNA and downconverter mixers
中文描述: RF/MICROWAVE DOWN CONVERTER
封裝: PLASTIC, HEATSINK BOTTOM CHIP CARRIER, SOT560-1, 32PIN
文件頁數(shù): 6/16頁
文件大小: 169K
代理商: SA9503
Philips Semiconductors
Objective specification
SA9503
Dual-band, CDMA/AMPS LNA
and downconverter mixers
1999 Jul 29
6
LNA
AC ELECTRICAL CHARACTERISTICS
V
CC
= 2.7 V to 3.3 V; T
amb
= 25
°
C
LIMITS
PARAMETER
TEST CONDITIONS
MIN
–3
σ
TYP
+3
σ
MAX
UNIT
Cellular Band LNA
RF input frequency range
869
894
MHz
S11
50
with external matching
50
with external matching
Common to all cellular modes
–10
dB
S22
Basic Gain Spread,
Gc
CEL_L Mode
–15
dB
–1
0
1
dB
Gain, S21
17 +
Gc
2.0
dB
Noise Figure
2.5
dB
Input IP3
2 tones of –30 dBm each,
f=800 kHz
2 tones of –30 dBm each,
f=60 kHz
4
5.5
dBm
1
2
dBm
S12
–40
dB
CEL_1 Mode
Gain, S21
15.5 +
Gc
1.6
dB
Noise Figure
1.9
dB
Input IP3
2 tones of –30 dBm each,
f=800 kHz
2 tones of –30 dBm each,
f=60 kHz
–3
–2
dBm
–7
–6
dBm
S12
–40
dB
CEL_2 Mode
Nominal Gain, S21
9 +
Gc
dB
Additional Gain spread
Relative to nominal gain
–2
2
Noise Figure
1.9
2.2
dB
Input IP3
2 tones of –30 dBm each,
f=800 kHz
–4.5
–3.5
dBm
S12
–40
dB
CEL_3 Mode
Nominal Gain, S21
3 +
Gc
dB
Additional Gain spread
Relative to nominal gain
–2
2
Noise Figure
4.5
5.5
dB
Input IP3
2 tones of –30 dBm each,
f=800 kHz
1
2
dBm
S12
–40
dB
CEL_4 Mode
Nominal Gain, S21
–4 +
Gc
dB
Additional Gain spread
Relative to nominal gain
–2
2
Noise Figure
11
11.5
dB
Input IP3
2 tones of –20 dBm each,
f=800 kHz
14
15
dBm
S12
–33
dB
LO (input and output) to LNA
input isolation
LO single-ended in, differential out, with
and without doubler. 0 dBm LO in, (Tx) LO
buffer ON, when in active modes. External
C ll l
Cellular and PCS filters connected, with
30 dB LO rejection from them.
i h
40
dB
All modes
Settling time
Change of mode
100
μ
s
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