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參數(shù)資料
| 型號： | SA7016 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | XO, clock |
| 英文描述： | 1.3GHz low voltage fractional-N synthesizer |
| 中文描述： | PLL FREQUENCY SYNTHESIZER, 1300 MHz, PDSO16 |
| 封裝： | PLASTIC, SOT-403-1, TSSOP-16 |
| 文件頁數(shù)： | 2/18頁 |
| 文件大?。?/td> | 232K |
| 代理商： | SA7016 |
Philips Semiconductors
Product specification
SA7016
1.3GHz low voltage fractional-N synthesizer
2
1999 Nov 04
853–2160 22634
GENERAL DESCRIPTION
The SA7016 BICMOS device integrates programmable dividers,
charge pumps and a phase comparator to implement a
phase-locked loop. The device is designed to operate from 3 NiCd
cells, in pocket phones, with low current and nominal 3 V supplies.
The synthesizer operates at VCO input frequencies up to 1.3 GHz.
The synthesizer has fully programmable main and reference
dividers. All divider ratios are supplied via a 3-wire serial
programming bus.
Separate power and ground pins are provided to the analog and
digital circuits. The ground leads should be externally short-circuited
to prevent large currents flowing across the die and thus causing
damage. V
DDCP
must be greater than or equal to
V
DD
.
The charge pump current (gain) is set by an external resistance at
the R
SET
pin
.
Only passive loop filters could be used; the charge
pump operates within a wide voltage compliance range to provide a
wider tuning range.
FEATURES
Low phase noise
Low power
Fully programmable main divider
Internal fractional spurious compensation
Hardware and software power down
Split supply for V
DD
and V
DDCP
SR01505
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
LOCK
TEST
V
DD
GND
RFin+
RFin–
GND
CP
PHP
PON
STROBE
DATA
CLOCK
REFin+
REFin–
R
SET
V
DDCP
Figure 1.
Pin Configuration
APPLICATIONS
350–1300 MHz wireless equipment
Cellular phones
Portable battery-powered radio equipment.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DD
Supply voltage
2.7
–
5.5
V
V
DDCP
Analog supply voltage
V
DDCP
≥
V
DD
2.7
–
5.5
V
I
DDCP
+I
DD
Total supply current
–
6.2
7.3
mA
I
DDCP
+I
DD
Total supply current in power-down mode
–
1
–
μ
A
f
VCO
Input frequency
350
–
1300
MHz
f
REF
Crystal reference input frequency
5
–
40
MHz
f
PC
Maximum phase comparator frequency
–
4
MHz
T
amb
Operating ambient temperature
–40
–
+85
°
C
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
SA7016DH
TSSOP16
Plastic thin shrink small outline package; 16 leads; body width 4.4 mm
SOT403–1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SA7016DH | 1.3GHz low voltage fractional-N synthesizer |
| SA701 | Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA701D | Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA701N | Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA701 | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SA7016DH | 制造商:PHILIPS-SEMI 功能描述: |
| SA701D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA701N | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Divide by: 128/129-64/65 dual modulus low power ECL prescaler |
| SA702 | 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| SA702/DF9M | 制造商:Hirose 功能描述:903-4508-0-00 EACH 制造商:Hirose 功能描述:SA702/DF9M |
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