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參數(shù)資料
| 型號： | SA631DK |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | ECONOLINE: RB & RA - Dual Output from a Single Input Rail- Power Sharing on Output- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 85% |
| 中文描述： | 800 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 103K |
| 代理商： | SA631DK |
Philips Semiconductors
Product specification
SA631
1GHz low voltage LNA and mixer
1998 Jan 08
4
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
amb
= 25
°
C; RF
IN
= 881MHz, f
VCO
= 964MHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
–3
TYP
+3
Low Noise Amplifier
f
RF
RF input frequency range
800
1000
MHz
S
21
Amplifier gain
15
dB
S
21
Amplifier gain in power-down mode
–28
dB
S
21
/
T
Gain temperature sensitivity enabled
0.006
dB/
°
C
S
21
/
f
Gain frequency variation
800MHz - 1.0GHz
±
0.013
dB/MHz
S
12
Amplifier reverse isolation
@ 881 MHz
–28
dB
S
11
Amplifier input match
With ext. impedance matching
–10
dB
S
22
Amplifier output match
–10
dB
P
-1dB
Amplifier input 1dB gain compression
–20
dBm
IP3
Amplifier input third order intercept
–7
dBm
NF
Amplifier noise figure
1.7
dB
t
ON
Amplifier turn-on time (Enable Lo
→
Hi)
120
μ
s
t
OFF
Amplifier turn-off time (Enable Hi
→
Lo)
0.3
μ
s
Mixer
PG
C
Mixer power conversion gain: R
P
= R
L
= 1.2k
f
RF
= 881MHz, f
= 964MHz,
f
IF
= 83MHz
9.6
dB
S
11M
Mixer input match
Ext. impedance matching req.
–10
dB
NF
M
Mixer SSB noise figure
10
dB
P
-1dB
Mixer input 1dB gain compression
–14.5
dBm
IP3
M
Mixer input third order intercept
3.3
dBm
IP
2INT
Mixer input second order intercept
38
dBm
P
RFM-IF
Mixer RF feedthrough
RF
IN
= –32dBm
–45
dBm
P
LO-IF
LO feedthrough to IF
LO = –0dBm
–23
dBm
P
LO-RFM
LO to mixer input feedthrough
–32
dBm
P
LO-RF
LO to LNA input feedthrough
–42
dBm
Overall System
G
SYS
System gain
LNA + Mixer
23.9
24.6
25.3
dB
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