參數資料
型號: SA6.0-E3/4
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
封裝: ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
文件頁數: 1/7頁
文件大?。?/td> 98K
代理商: SA6.0-E3/4
Vishay General Semiconductor
SA5.0 thru SA170CA
Document Number 88378
07-Jun-06
www.vishay.com
1
TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
Available in Unidirectional and Bidirectional
500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients
induced
by
inductive
load
switching
and lighting on ICs, MOSFET, signal lines of sensor
units
for
consumer,
computer,
industrial
and
telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over passivated chip
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
DO-204AC (DO-15)
DEVICES FOR BIDIRECTION APPLICATIONS
For
bidirectional
types,
use
C
or
CA
suffix
(e.g. SA5.0C, SA170CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
VWM
5.0 V to 170 V
PPPM
500 W
PD
3.0 W
IFSM (Unidirectional only)
70 A
Tj max.
175 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1) (Fig. 1)
PPPM
500 (min.)
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See Next Table
A
Power dissipation on infinite heatsink at TA = 75 °C (Fig. 5)
PD
3.0
W
Peak forward surge current, 10ms single half sine-wave unidirectional only
IFSM
70
A
Maximum instantaneous forward voltage at 35 A for unidirectional only (2)
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相關PDF資料
PDF描述
SA8.0CA-E3/4 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SA160C-HE3/54 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SA70-HE3/54 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SA75A-HE3/54 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SA18A-E3/23 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
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