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參數(shù)資料
| 型號： | SA5205AD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Wide-band high-frequency amplifier |
| 中文描述： | 0 MHz - 600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 190K |
| 代理商： | SA5205AD |
Philips Semiconductors
Product specification
NE/SA/SE5205A
Wide-band high-frequency amplifier
1992 Feb 24
8
POWER DISSIPATION CONSIDERATIONS
When using the part at elevated temperature, the engineer should con-
sider the power dissipation capabilities of each package.
At the nominal supply voltage of 6V, the typical supply current is
25mA (32mA Max). For operation at supply voltages other than 6V,
see Figure 3 for I
CC
versus V
CC
curves. The supply current is
inversely proportional to temperature and varies no more than 1mA
between 25
°
C and either temperature extreme. The change is 0.1%
per over the range.
The recommended operating temperature ranges are air-mount
specifications. Better heat sinking benefits can be realized by
mounting the D package body against the PC board plane.
PC BOARD MOUNTING
In order to realize satisfactory mounting of the NE5205A to a PC
board, certain techniques need to be utilized. The board must be
double-sided with copper and all pins must be soldered to their
respective areas (i.e., all GND and V
CC
pins on the SO package).
The power supply should be decoupled with a capacitor as close to
the V
CC
pins as possible and an RF choke should be inserted
between the supply and the device. Caution should be exercised in
the connection of input and output pins. Standard microstrip should
be observed wherever possible. There should be no solder bumps
or burrs or any obstructions in the signal path to cause launching
problems. The path should be as straight as possible and lead
lengths as short as possible from the part to the cable connection.
Another important consideration is that the input and output should
be AC coupled. This is because at V
CC
=6V, the input is
approximately at 1V while the output is at 3.1V. The output must be
decoupled into a low impedance system or the DC bias on the
output of the amplifier will be loaded down causing loss of output
power. The easiest way to decouple the entire amplifier is by
soldering a high frequency chip capacitor directly to the input and
output pins of the device. This circuit is shown in Figure 18. Follow
these recommendations to get the best frequency response and
noise immunity. The board design is as important as the integrated
circuit design itself.
SCATTERING PARAMETERS
The primary specifications for the NE/SA/SE5205A are listed as
S-parameters. S-parameters are measurements of incident and
reflected currents and voltages between the source, amplifier and
load as well as transmission losses. The parameters for a two-port
network are defined in Figure 19.
Actual S-parameter measurements using an HP network analyzer
(model 8505A) and an HP S-parameter tester (models 8503A/B) are
shown in Figure 20.
Values for the figures below are measured and specified in the data
sheet to ease adaptation and comparison of the NE/SA/SE5205A to
other high-frequency amplifiers.
NE5205A
V
OUT
V
IN
V
CC
AC
COUPLING
CAPACITOR
RF CHOKE
DECOUPLING
CAPACITOR
AC
COUPLING
CAPACITOR
SR00232
Figure 18. Circuit Schematic for Coupling and Power Supply
Decoupling
a. Two-Port Network Defined
b.
S
21
S
12
S
22
S
11
POWER AVAILABLE FROM
GENERATOR AT INPUT PORT
POWER REFLECTED
FROM INPUT PORT
S
11
=
POWER REFLECTED
FROM OUTPUT PORT
POWER AVAILABLE FROM
GENERATOR AT OUTPUT PORT
S
22
=
REVERSE TRANSDUCER
POWER GAIN
S
12
=
S
11
— INPUT RETURN LOSS
S
— REVERSE TRANSMISSION LOSS
OSOLATION
S
— FORWARD TRANSMISSION LOSS
OR INSERTION GAIN
S
21
= TRANSDUCER POWER GAIN
S
22
— OUTPUT RETURN LOSS
SR00233
Figure 19.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SA5205AN | Wide-band high-frequency amplifier |
| SA5205 | Wide-band high-frequency amplifier |
| SA5205A | Wide-band high-frequency amplifier |
| SA5209 | Wideband variable gain amplifier |
| SA5209D | Wideband variable gain amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SA5205AN | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Wide-band high-frequency amplifier |
| SA5209 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Wideband variable gain amplifier |
| SA5209D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Wideband variable gain amplifier |
| SA5209D,602 | 功能描述:射頻放大器 WIDEBAND VARIABLE GAIN AMP RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| SA5209D,623 | 功能描述:射頻放大器 WIDEBAND VARIABLE GAIN AMP RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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