參數(shù)資料
型號(hào): SA36CHE3/54
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
封裝: ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 103K
代理商: SA36CHE3/54
SA5.0 thru SA170CA
Vishay General Semiconductor
Document Number: 88378
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
Available in uni-directional and bi-directional
500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients
induced
by
inductive
load
switching
and lighting on ICs, MOSFET, signal lines of sensor
units
for
consumer,
computer,
industrial
and
telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
types,
use
C
or
CA
suffix
(e.g. SA5.0C, SA170CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VWM
5.0 V to 170 V
PPPM
500 W
PD
3.0 W
IFSM (uni-directional only)
70 A
TJ max.
175 °C
DO-204AC (DO-15)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1) (Fig. 1)
PPPM
500
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See next table
A
Power dissipation on infinite heatsink at TA = 75 °C (Fig. 5)
PD
3.0
W
Peak forward surge current, 10 ms single half sine-wave uni-directional only
IFSM
70
A
Maximum instantaneous forward voltage at 35 A for uni-directional only (2)
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相關(guān)PDF資料
PDF描述
SA40CAHE3/54 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SM6T22AHE3/52 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMA5J10CAHE3/61 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA5J22HE3/5A 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA5J28HE3/61 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
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