參數(shù)資料
型號(hào)： SA1921
廠商： NXP SEMICONDUCTORS
元件分類： 無繩電話/電話
英文描述： Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
中文描述： TELECOM, CELLULAR, RF FRONT END CIRCUIT, PQFP48
封裝： 7 X 7 X 1.40 MM, PLASTIC, QFP-48
文件頁(yè)數(shù)： 9/36頁(yè)
文件大小： 507K
代理商： SA1921
Philips Semiconductors
Product specification
SA1921
Satellite and cellular dual-band RF front-end
1999 Mar 02
9
AC ELECTRICAL CHARACTERISTICS
High-Band, Single Mode of Operation
LNA and Image Reject Mixer
V
CC
= +3.75 V, Freq
RF
= 1550 MHz, Freq
LO
= 1713 MHz, P
LOin
= –3 dBm, T
A
= +25 C; unless otherwise stated.
PARAMETERS
MIN
–3
TYP.
+3
MAX
UNITS
NOTES
RF Input Frequency Range
1515
1600
MHz
IF Frequency
150
163
185
MHz
LO Frequency
1665
1785
MHz
Power Gain
21.5
22.2
22.9
dB
Power Gain Reduction (Strong Signal Mode—LNA Off)
34
47
60
dB
Noise Figure
3.7
3.9
4.1
dB
Input Impedance, RF Port
50
Return Loss at Inputs
–10
dB
1
LO leakage at RF Port
–48
dBm
1 dB RF Input Compression Point
–24
dBm
IP3 (3
RD
Order Intermodulation Product)
Referred to the RF Input Port
–14
–11.5
–9
dBm
(2 x LO) – (2 x RF) Spur Performance
–50 dBm IN Referred to RF Input Port
50 dBm IN Referred to RF In ut Port
Measure at LO = 1688 MHz and RF = 1606 MHz
–62
dBc
(3 x LO) – (3 x RF) Spur Performance.
–50 dBm IN Referred to RF Input Port.
Measure at LO = 1688 MHz and RF = 1634 MHz.
–102
dBc
Image rejection, f
+2f
Referred to the RF Input Port
31.5
34
36.5
dB
LO Input Power
–5
–3
–1
dBm
Turn ON/OFF Time
10
sec
High-Band LO Buffer
V
CC
= +3.75 V, Freq
LO
= 1713 MHz, P
LOin
= –3 dBm, T
A
= +25 C; unless otherwise stated.
PARAMETERS
MIN
–3
TYP.
+3
MAX
UNITS
NOTES
LO Frequency Range
1665
1785
MHz
Differential Output Power
–9
dBm
Differential Output Impedance
100
Harmonic Content
–20
dBc
Input Power
–5
–3
–1
dBm
Input Impedance
50
1
Turn On/Off Time
10
sec
NOTE:
1. External matching network is required.
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